Date of Award

9-2024

Degree Name

MS in Electrical Engineering

Department/Program

Electrical Engineering

College

College of Engineering

Advisor

Ben Hawkins

Advisor Department

Electrical Engineering

Advisor College

College of Engineering

Abstract

The proposed research is for a novel SiGe-based Ion-Sensitive Dual Hetero-junction Bipolar Transistor (IS-HBT) to be used in both trans-dermal biological sensing as well as Lab-on-Chip (LOC) applications. The end goals for the device designed are two: For one, the research done for this work will be used to substantiate the claims made by Zafar et al. [1] that an HBT-style structure is better suited for biosensing application rather than a conventional Field Effect Transistor (FET) based geometries. Secondly, it provides the final element to be integrated along with a selectivity membrane, as well as with a reverse-iontophoresis system to enact trans-dermal sensing of potassium ions in a wearer’s body. The novelty of the device stems from the proposed modified wedding-cake structure lending itself to be easily implemented in a wearable package, the fact that it will act as both a transduction device as well as provide preamplification of signals. If successful, future researchers and/or corporations will have at their disposal a label-free advanced biosensor design that is integration-ready with currently available standard SiGe-BiCMOS processes.

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