Suppression of Multiple Pulse Formation in External-Cavity Mode-Locked Semiconductor Lasers Using Intrawaveguide Saturable Absorbers

Author Info

Dennis J. Derickson, University of California - Santa BarbaraFollow
R. J. Helkey, University of California - Santa Barbara
A. Mar, University of California - Santa Barbara
Judy R. Karin, University of California - Santa Barbara
J. E. Bowers, University of California - Santa Barbara
R. L. Thornton, Xerox Reserach Center, Palo Alto, CA

Recommended Citation

Published in IEEE Photonics Technology Letters, Volume 5, Issue 5, April 1, 1992, pages 333-335.

NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.

The definitive version is available at https://doi.org/10.1109/68.127204.

Abstract

Imperfect antireflection coatings in external-cavity mode-locked semiconductor lasers can cause multiple output pulse generation. The incorporation of an intrawaveguide saturable absorber segment into the laser suppresses this problem. Single pulse outputs of less than 2.8 ps and 0.7 pJ of energy are obtained using such devices with both quantum well and bulk active regions

Disciplines

Electrical and Computer Engineering

Copyright

1992 IEEE.

Publisher statement

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