Published in IEEE Transactions on Electron Devices, Volume 38, Issue 8, August 1, 1991, pages 1968-1970.
NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.
The definitive version is available at https://doi.org/10.1109/16.119043.
A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al0.27Ga0.73As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-μm2 mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and 22-GHz bandwidths are typically measured.
Electrical and Computer Engineering
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