Recommended Citation
Published in IEEE Transactions on Electron Devices, Volume 38, Issue 8, August 1, 1991, pages 1968-1970.
NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.
The definitive version is available at https://doi.org/10.1109/16.119043.
Abstract
A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al0.27Ga0.73As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-μm2 mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and 22-GHz bandwidths are typically measured.
Disciplines
Electrical and Computer Engineering
Copyright
1991 IEEE.
Publisher statement
Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
URL: https://digitalcommons.calpoly.edu/eeng_fac/91