Published in 23rd Annual Meeting of the IEEE Photonics Society, November 7, 2010, pages 431-432.
The definitive version is available at https://doi.org/10.1109/PHOTONICS.2010.5698944.
The RF output power of Ge/Si n-i-p waveguide photodetectors is improved by increasing the load impedance. The maximum extracted RF power at 3GHz is 17.13dBm with a compression current of 42mA using a 100Ὠ load.
Electrical and Computer Engineering
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