Recommended Citation
Published in 23rd Annual Meeting of the IEEE Photonics Society, November 7, 2010, pages 431-432.
The definitive version is available at https://doi.org/10.1109/PHOTONICS.2010.5698944.
Abstract
The RF output power of Ge/Si n-i-p waveguide photodetectors is improved by increasing the load impedance. The maximum extracted RF power at 3GHz is 17.13dBm with a compression current of 42mA using a 100Ὠ load.
Disciplines
Electrical and Computer Engineering
Copyright
2010 IEEE.
Publisher statement
Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
URL: https://digitalcommons.calpoly.edu/eeng_fac/224