Title

Sensitivity of Second Harmonic Generation to Space Charge Effects at Si(111)/Electrolyte and Si(111)/SiO₂/Electrolyte Interfaces

Author Info

P. R. Fischer, University of Oregon
J. L. Daschbach, University of Oregon
D. E. Gragson, University of OregonFollow
G. L. Richmond, University of Oregon

Recommended Citation

Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 12, Issue 5, September 1, 1994, pages 2617-2624.

NOTE: At the time of publication, the author D.E. Gragson was not yet affiliated with Cal Poly.

The definitive version is available at https://doi.org/10.1116/1.579080.

Abstract

The potential dependence in the surface second harmonic response from hydrogen terminated n‐Si(111) and oxidized n‐Si(111) surfaces has been examined in aqueous NH₄F and H₂SO₄ solutions. The relative phase of the nonlinear response as measured by rotational anisotropy experiments is found to be highly sensitive to the presence of the oxide and the field applied across the Si(111)/oxide/electrolyte interface. These observations are attributed to field effects within the space–charge region of the semiconductor which vary with the presence and thickness of the insulating oxide layer on the Si(111) surface.

Disciplines

Biochemistry | Chemistry

Copyright

1994 American Vacuum Society.