Hall Effect Modeling in FEM Simulators and Comparison to Experimental Results in Silicon and Printed Sensors

Author

Leonardo A. Frem, California Polytechnic State University, San Luis ObispoFollow

DOI: https://doi.org/10.15368/theses.2016.86
Available at: https://digitalcommons.calpoly.edu/theses/1618

Date of Award

6-2016

Degree Name

MS in Electrical Engineering

Department/Program

Electrical Engineering

Advisor

Tina Smilkstein

Abstract

Finite element method simulation models for thin-film semiconductor-based Hall sensors were developed using secondary data in order to understand their behavior under strong magnetic fields. Given a device geometry and charge carrier density and mobility, the models accurately calculated sensor resistance, Hall voltage under a normally-incident constant magnetic field, and expected offset from a population of Hall devices. The model was successfully matched against data from integrated chip Hall sensors from St. Jude Medical. Additionally, the feasibility of creating Hall effect devices with common carbon ink was explored experimentally. The material properties obtained from testing these ink-based devices through the Van der Pauw method were added to the simulation model to analyze validity of the collected data.