August 1, 2011.
Determining the optimal growth parameters for germanium (Ge) and gallium antimonide (GaSb) nanowires is the focus of this research. Given the fact that nano materials behave differently from their bulk counterparts we are researching some variables that influence nanowire diameter and length such as temperature, ramp rate, gas flow rate, and catalyst particle size. Based on the nano material size which is typically a few 10s of nanometers wide, these nano materials can be engineered to take advantage of their optical properties. Specifically the infrared (IR) response of Ge and GaSb nanowires are directly controllable based on their geometry. Fine tuning the IR response can lead to device integration for night vision, chemical sensing, and free space communications. Our early research has been successful in growing Au-Ge nanowires of varying lengths – some are approximately 40 microns in length. We achieved the growth using a Vapor Liquid Solid (VLS) method, a 5 nm gold (Au) colloidal catalyst, growth temperature of 860 oC and a gas flow of argon at meter reading of 60/200. Further research will include adjusting the above-listed variables in order to gain a clearer understanding of the optimal growth conditions for Ge and GaSb nanowires.
Chemistry | Inorganic Chemistry | Materials Chemistry | Physical Sciences and Mathematics
NASA Ames Research Center (ARC)
This material is based upon work supported by the S.D. Bechtel, Jr. Foundation and by the National Science Foundation under Grant No. 0952013. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the S.D. Bechtel, Jr. Foundation or the National Science Foundation.