Published in Proceedings of the 1984 Materials Research Society Fall Meeting: Symposium F, Volume 38: Plasma Synthesis and Etching of Electronic Materials, January 1, 1985, pages 77-84.
NOTE: At the time of publication, the author Richard Savage was not yet affiliated with Cal Poly.
Optical emission spectroscopy (OES) has proven to be a valuable tool in the developmrent and production of state-of-the-art semiconductor devices. Application to the plasma etching of a variety of materials necessary for integrated circuit fabrication is discussed, with particular emphasis placed on etch endpoint analysis. The utility of OES techniques in monitoring photolithographic processes is also presented.
Materials Science and Engineering
The definitive version is available at http://www.mrs.org/s_mrs/sec.asp?CID=11820&DID=204472.