Published in Advanced Techniques for Integrated Circuit Processing, Volume 1392, August 19, 1990, pages 551-554.
NOTE: At the time of publication, the author Richard Savage was not yet affiliated with Cal Poly.
The definitive version is available at https://doi.org/10.1117/12.48948.
This paper will discuss the performance of equipment which monitors and so controls photoresist thickness and uniformity during plasma ashing without interfering with the process. Practical monitoring of a subtractive process of this type is significantly more complex than monitoring deposition processes. An initial absolute thickness measurement is needed. In addition the device must view the layer through a luminous medium and cannot rely on simple optical interference fringe counting. The equipment is self-calibrating and sensitive to layers dnm thick. An application to partial plasma resist ashing in high uniformity equipment will be described. Application to other films (e. g. oxide) will be discussed
Materials Science and Engineering
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