College - Author 1
College of Engineering
Department - Author 1
Electrical Engineering Department
Degree Name - Author 1
BS in Electrical Engineering
Ben G. Hawkins, College of Engineering, Electrical Engineering Department
The use of Ion-Sensitive Field Effect Transistors (ISFETs) as a means of testing a person’s potassium concentration in real-time has broad applications in the consumer space. An avid runner could use such a device to keep track of their hydration and salt levels. A hospital could use it for patients who require around-the-clock remote monitoring, and a variation of ISFETs are currently being used as continuous glucose monitors for diabetes patients. While ISFETs are not a new development in the field of microelectronics, their use as wearable devices has recently become relevant. The goal of this project is primarily to develop a working ISFET with a selectivity bias of potassium and sodium ions with a high level of sensitivity to allow for implementation of the device into a type of “Smart Wristband” someone can wear. In this particular application, the ISFET device will be fed ionic biomolecules via a reverse iontophoresis process, where it can then act as a sensor used to determine the potassium and sodium concentrations of the wearer. A device of this specific nature could be incredibly useful in the medical field as a more convenient means of patient monitoring, specifically for patients with chronic kidney disease or diabetic ketoacidosis . In order to make a device effective enough in this sort of application, the sensitivity of the ISFETs must be very high, and the cost must be low. The following will be a detailed description and analysis of a proposed device design and the associated fabrication methodology used in realizing the proposed design. The following will contain a description and analysis of the designed ISFET device as well as the designed fabrication process and testing methodologies that will be used.