College - Author 1
College of Engineering
Department - Author 1
Electrical Engineering Department
Degree Name - Author 1
BS in Electrical Engineering
Taufik, College of Engineering, Electrical Engineering Department
Efficiency and power loss contributions are two of the main concerns in power systems. This project exerts the use of wide bandgap semiconductors, namely Gallium Nitride (GaN), and their benefit within a Cisco Systems point-of-load converter. This project provides tools to assist researchers and practicing engineers in performing further characterization, and implementation, of GaN devices. Silicon-based Metal Oxide Semiconductor Field Effect (MOSFETs) transistors have prevailed in power conversion applications for decades and are now considered an industry standard. Presently, the utilization of wide bandgap semiconductors is an emerging, competitive technology, as they offer many major advantages over the traditional silicon solutions. These advantages include increased power efficiency, higher thermal conductivity, smaller form factors, the ability to increase current density, and much more. These advantages motivated the implementation of wide bandgap solutions to create a new multiphase buck converter design that transforms an unregulated input of 12V to 1V at 320A at the output. In low voltage applications, wide bandgap semiconductors have proven to be useful. These semiconductors allow innovators to push the envelope by exploring more efficient opportunities, like the opportunity explored in this project, for power conversion applications.