Electrical Engineering Department
BS in Electrical Engineering
Reducing energy consumption is one the most critical and necessary actions being continually worked towards by many. According to the U.S. department of Energy, solid-state lighting (SSL) has the potential to reduce the light consumption in the United States by nearly one half and that light-emitting diodes (LEDs) will change the way of lighting in our homes and businesses. Gallium Nitride (GaN) based light emitting diode (LED) technologies are continuing to have a fast growing contribution to various applications in today’s society. GaN LEDS are already replacing the esteemed incandescent light bulb, and are transforming traffic lighting, optical interconnects, backlight displays and general lighting purposes. Unlike conventional light sources, gallium nitride based LEDs have many advantages. This study systematically studies the effects of two methods to enhance light extraction efficiency of gallium nitride (GaN) LEDs: nano-grating photonic crystal structures and ITO nano-gratings atop GaN LEDs. For the photonic crystal gratings, each simulation varies in filling factor, grating cell period, grating cell width, and grating layer location and provides a result of total transmission across the device. For the ITO nano-gratings, again each simulation varies in filling factor, grating cell period, grating cell width, and grating layer location, but also geometric shapes of triangles and squares. The simulations provide result of total transmission across the device. These results are used to calculate improvement over the non-grated surface GaN LED.