Published in IEEE Photonics Technology Letters, Volume 3, Issue 6, June 1, 1991, pages 513-515.
NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.
The definitive version is available at https://doi.org/10.1109/68.91018.
Electrooptic modulators built from GaAs/AlxGa1-xAs Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response agrees well with the one predicted using an equivalent circuit model derived from high-speed electrical measurements. The parasitic capacitances have been reduced to approximately 30 fF by fabricating the devices on semi-insulating GaAs substrates and integrating them with on-wafer bound pads which have dimensions compatible with microwave coplanar probes.
Electrical and Computer Engineering
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