Semiconductor Laser Device-Level Characteristics

Author

Clement K. Law, California Polytechnic State University, San Luis ObispoFollow

DOI: https://doi.org/10.15368/theses.2011.50
Available at: https://digitalcommons.calpoly.edu/theses/493

Date of Award

5-2011

Degree Name

MS in Electrical Engineering

Department/Program

Electrical Engineering

Advisor

Xiaomin Jin

Abstract

High-speed modulations of the semiconductor lasers are highly desirable in cost-effective optical communication systems. Developing the experimental setups to extract the characteristics of the semiconductor lasers is vital to the future of the optical research projects. In this thesis, integrated experimental setup designs have been developed to measure the characteristics of the Vertical Cavity Surface Emitting Laser (VCSEL), Distributed Feedback (DFB), and Fabry-Pérot (FP) lasers. The measurements of the DC characteristics are optical power versus drive current (L-I) curves (DFB, VCSEL) and optical spectra (FP, DFB, VCSEL). In addition, the high-speed optical detection measurement of the optoelectronic frequency responses for VCSEL and FP lasers, and relative intensity noise (RIN) for DFB and FP lasers have also been measured. Finally, the measurement of the frequency response of the optical pumping with 850nm VCSEL has been attempted.