Title
Real-Time, In-Situ Measurement of Film Thickness and Uniformity During Plasma Ashing of Photoresist
Recommended Citation
Published in Advanced Techniques for Integrated Circuit Processing, Volume 1392, August 19, 1990, pages 551-554.
NOTE: At the time of publication, the author Richard Savage was not yet affiliated with Cal Poly.
The definitive version is available at https://doi.org/10.1117/12.48948.
Abstract
This paper will discuss the performance of equipment which monitors and so controls photoresist thickness and uniformity during plasma ashing without interfering with the process. Practical monitoring of a subtractive process of this type is significantly more complex than monitoring deposition processes. An initial absolute thickness measurement is needed. In addition the device must view the layer through a luminous medium and cannot rely on simple optical interference fringe counting. The equipment is self-calibrating and sensitive to layers dnm thick. An application to partial plasma resist ashing in high uniformity equipment will be described. Application to other films (e. g. oxide) will be discussed
Disciplines
Materials Science and Engineering
Copyright
Publisher statement
One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
URL: https://digitalcommons.calpoly.edu/mate_fac/96