Published in Chinese Optics Letters, Volume 5, Issue 10, October 10, 2007, pages 588-590.
This paper was published in Chinese Optics Letters and is made available as an electronic reprint with the permission of OSA. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiply locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. Copyright © 2007 Optical Society of America. The definitive version is available at http://www.opticsinfobase.org/col/abstract.cfm?uri=col-5-10-588.
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.
Electrical and Computer Engineering