Published in Chinese Optics Letters, Volume 5, Issue 10, October 10, 2007, pages 588-590.
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.
Electrical and Computer Engineering
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