Published in Proceedings of the Indium Phosphide and Related Materials Conference: Hokaido, Japan, May 9, 1995, pages 624-627.
NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.
The definitive version is available at http://dx.doi.org/10.1109/ICIPRM.1995.522221.
Research has been conducted on the physical damage and hydrogenation effects during RF plasma exposure and epitaxial growth in the III-V material system. Device consequences of this damage or chemical alteration have received less attention, particularly in active light emitting devices. This paper discusses these effects for lasers and edge emitting light-emitting diodes (EELEDs) which use a ridge waveguide structure. By using analysis techniques such as SIMS we have concluded that methane-hydrogen reactive ion etching of InP induces hydrogen levels in an active device which are high enough to significantly alter the device properties. The decrease in light output is substantial, but subsequent annealing times as short as 1 min. at 430°C can restore power dramatically.
Electrical and Computer Engineering
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