Published in Proceedings of the Asia-Pacific Microwave Conference: Bangkok, Thailand, December 11, 2007, pages 1317-1320.
The definitive version is available at https://doi.org/10.1109/APMC.2007.4555132.
A class B and a class F power amplifier are described using a GaN HEMT device. They both were designed to operate at a frequency of 1.7 GHz with the same bias conditions. The performances of each amplifier were successfully simulated and compared. A class B amplifier was physically implemented and achieved a high power-added-efficiency of 69.2%, 39.9 dBm output power and associated gain of 14.9 dB. The experimental results were in close agreement to the simulation results.
Electrical and Computer Engineering
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