Postprint version. Published in The 2012 IEEE 55th International Midwest Symposium on Circuits and Systems: Boise, ID, August 5, 2012, pages 290-293.
The definitive version is available at https://doi.org/10.1109/MWSCAS.2012.6292014.
This work is concerned with the gm-I dependence of sub-micrometer MOSFETs. The transconductance-current expression given by the Advanced Compact Model (ACM) is reviewed and simple modification is proposed. The modification yields an expression which (with proper parametrization) captures the gm-I dependence of short-channel MOSFETs. The proposed expression is “universal” in the sense that it is capable of modeling the gm-I dependence of long-channel MOSFETs, short-channel MOSFETs, and resistively-degenerated BJTs.
Electrical and Computer Engineering
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