Published in Applied Physics Letters, Volume 77, Issue 9, August 28, 2000, pages 1250-1252.
NOTE: At the time of publication, the author Xiaomin Jin was not yet affiliated with Cal Poly.
An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry–Perot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results.
Electrical and Computer Engineering
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