Published in Applied Physics Letters, Volume 77, Issue 9, August 28, 2000, pages 1250-1252.
Copyright © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article may be found at http://link.aip.org/link/?APPLAB/77/1250/1.
NOTE: At the time of publication, the author Xiaomin Jin was not yet affiliated with Cal Poly.
An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry–Perot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results.
Electrical and Computer Engineering