A new method for measuring the linewidth enhancement factor of semiconductor lasers using the injection-locking technique is presented. This idea is based on the relation between the upper and lower bounds of the locked and unlocked regimes when the detuning of the pump and slave laser is plotted as a function of the injection power. Our results are confirmed with an independent measurement using amplified spontaneous emission (ASE) spectroscopy as well as our theory, which takes account of the realistic quantum-well (QW) band structure and many-body effects. This method provides a new approach to measure the linewidth enhancement factor above laser threshold.


Electrical and Computer Engineering

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