Title
Improved RF Power Extraction from 1.55μm Ge/Si n-i-p Photodiodes with Load Impedance Optimization
Recommended Citation
Published in 23rd Annual Meeting of the IEEE Photonics Society, November 7, 2010, pages 431-432.
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Abstract
The RF output power of Ge/Si n-i-p waveguide photodetectors is improved by increasing the load impedance. The maximum extracted RF power at 3GHz is 17.13dBm with a compression current of 42mA using a 100Ὠ load.
Disciplines
Electrical and Computer Engineering
URL: http://digitalcommons.calpoly.edu/eeng_fac/224