Recommended Citation
Published in 22nd Annual IEEE Applied Power Electronics Conference Proceedings: Anaheim, CA, February 25, 2007, pages 1053-1056.
The definitive version is available at https://doi.org/10.1109/APEX.2007.357645.
Abstract
The main principle behind the new Super Barrier Rectifier (SBR) approach is to create the "Super" barrier for majority carriers without unreliable metal-semiconductor Schottky contact. SBR technology creates such barrier in the MOS channel. The height of this barrier can be easily adjusted by the doping concentration in the channel. This paper demonstrates that the new power diodes combine high performance and high reliability for low voltage applications (below 100V). The underlying concepts and analysis of operation are presented as well as the lab test results that compare performance and reliability between Schottky and the new SBR diode.
Disciplines
Electrical and Computer Engineering
Copyright
2007 IEEE.
Publisher statement
Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
URL: https://digitalcommons.calpoly.edu/eeng_fac/214