Published in Proceedings of the International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, Volume 7382, June 17, 2009.
Copyright © 2009 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. This paper is also available at http://dx.doi.org/10.1117/12.834103.
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.
Electrical and Computer Engineering