Recommended Citation
Published in Proceedings of the International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, Volume 7382, June 17, 2009.
The definitive version is available at https://doi.org/10.1117/12.834103.
Abstract
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.
Disciplines
Electrical and Computer Engineering
Copyright
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URL: https://digitalcommons.calpoly.edu/eeng_fac/171